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Dr Jin Qiu, VP MEMS Technology – QST | Topic: QST 6-Axis MEMS Inertial Sensor Based on Through-Silicon Via Technology

19 Mar 2019
18:00 – 18:15

Dr Jin Qiu, VP MEMS Technology – QST | Topic: QST 6-Axis MEMS Inertial Sensor Based on Through-Silicon Via Technology

QST 6-Axis Inertial Sensor combines a 3-axis gyroscope and a 3-axis accelerometer a single MEMS die. The MEMS device utilizes an industry first Through-Silicon Via (TSV) technology, with a thick single-crystal Silicon active layer bonded between a TSV layer and a cap layer under vacuum. Due to the 60µm thick device layer, QST IMU achieves significantly higher sense signals and lower noise, better shock, and stiction resistance. Due to embedded TSVs, it enables chip-scale packaging (CSP) bringing greater footprint reduction potential than other inertial sensor technologies. With its unique fabrication process enabling dual-pressure cavities and superior single-mass gyro/accel design, QST IMU achieves the lowest noise in the consumer market while improving robustness and reducing die size and cost of the MEMS sensing element.