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Gernot Fattinger – Qorvo

Director of BAW R&D

Gernot Fattinger – Qorvo

Director of BAW R&D

Biography

Education:

•       Degree in Communications and Electrical Engineering from Technical High School Leonding in 1995

•       M.S. in Semiconductor Physics from University of Linz, Austria in collaboration with Infineon Technologies Munich, 2000

•       PhD in Semiconductor Physics from University of Linz, Austria in collaboration with Infineon Technologies Munich, 2005

Employment:

•       BAW R&D engineer with Infineon Technologies from 2003-2006

•       BAW R&D engineer with TriQuint Semiconductor from 2006-2008

•       BAW R&D manager with TriQuint Semincondutor from 2008-2014

•       Director of BAW R&D with TriQuint/Qorvo from 2014-present

Started professional career through early internships (Siemens, Munich) alongside University, working on MEMS devices (accelerometers, gyroscopes, pressures sensors, switches). Master Thesis at Infineon Technologies, Munich, about laser interferometric measurement of high frequency vibrations in BAW devices. PhD thesis, also at Infineon, about fundamental device physics of BAW devices. Full time position as R&D engineer at Infineon thereafter. Worked on various commercial BAW filters, and advanced R&D projects (couple resonator filters in BAW). Responsibilities in technology development (trim, 5GHz), as well as fundamental device improvements. Full time position as initial BAW R&D engineer at Sawtek/Triquint in Orlando, FL. Started building BAW filter technology at Triquint, and BAW R&D group. Became R&D group manager and subsequently Director of BAW R&D at Triquint/Qorvo. Worked on every aspect of BAW technology, and most aspects of Front-end module architecture, and integration of components from different technologies. Now overseeing the BAW R&D organization of about 45 employees at Qorvo, in a growing business and an exciting and challenging environment.

All session by Gernot Fattinger – Qorvo